HGTP10N120BN
vs
HGT1S10N120BNS
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
ONSEMI
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
TO-263AB, 3 PIN
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW CONDUCTION LOSS
|
LOW CONDUCTION LOSS
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
35 A
|
35 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
SINGLE
|
SINGLE
|
| JEDEC-95 Code |
TO-220AB
|
TO-263AB
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
2
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
MOTOR CONTROL
|
MOTOR CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
190 ns
|
330 ns
|
| Turn-on Time-Nom (ton) |
21 ns
|
32 ns
|
| Base Number Matches |
5
|
4
|
| Pbfree Code |
|
Yes
|
| Manufacturer Package Code |
|
418AJ
|
| Factory Lead Time |
|
27 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| Fall Time-Max (tf) |
|
200 ns
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
298 W
|
| Rise Time-Max (tr) |
|
15 ns
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Turn-off Time-Max (toff) |
|
450 ns
|
| Turn-on Time-Max (ton) |
|
40 ns
|
| VCEsat-Max |
|
4.2 V
|
|
|
|
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