HGTP10N120BN vs HGT1S10N120BNST feature comparison

HGTP10N120BN onsemi

Buy Now Datasheet

HGT1S10N120BNST Fairchild Semiconductor Corporation

Buy Now Datasheet
Pbfree Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ON SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR CORP
Package Description FLANGE MOUNT, R-PSFM-T3 TO-263AB, 3 PIN
Manufacturer Package Code 340AT 2LD,TO263, SURFACE MOUNT
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer onsemi
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 35 A 35 A
Collector-Emitter Voltage-Max 1200 V 1200 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 200 ns 200 ns
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 298 W 298 W
Qualification Status Not Qualified Not Qualified
Rise Time-Max (tr) 15 ns 15 ns
Surface Mount NO YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 450 ns
Turn-off Time-Nom (toff) 330 ns 330 ns
Turn-on Time-Max (ton) 40 ns
Turn-on Time-Nom (ton) 32 ns 32 ns
VCEsat-Max 4.2 V
Base Number Matches 5 2
Rohs Code Yes
Part Package Code D2PAK
Pin Count 2
HTS Code 8541.29.00.95
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30

Compare HGTP10N120BN with alternatives

Compare HGT1S10N120BNST with alternatives