HGTP12N60C3 vs HGTP3N60A4D feature comparison

HGTP12N60C3 Fairchild Semiconductor Corporation

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HGTP3N60A4D Rochester Electronics LLC

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP ROCHESTER ELECTRONICS LLC
Reach Compliance Code compliant unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 24 A 17 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 275 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 480 ns 180 ns
Turn-on Time-Nom (ton) 30 ns 17.5 ns
Base Number Matches 4 4
Pbfree Code Yes
Moisture Sensitivity Level NOT APPLICABLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE

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