HGTP12N60C3D
vs
APT15GT60KR
feature comparison
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Part Life Cycle Code |
|
Obsolete
|
| Ihs Manufacturer |
|
MICROSEMI CORP
|
| Part Package Code |
|
TO-220AB
|
| Package Description |
|
TO-220, 3 PIN
|
| Pin Count |
|
3
|
| Reach Compliance Code |
|
unknown
|
| ECCN Code |
|
EAR99
|
| Additional Feature |
|
AVALANCHE RATED
|
| Case Connection |
|
COLLECTOR
|
| Collector Current-Max (IC) |
|
42 A
|
| Collector-Emitter Voltage-Max |
|
600 V
|
| Configuration |
|
SINGLE
|
| Fall Time-Max (tf) |
|
78 ns
|
| Gate-Emitter Thr Voltage-Max |
|
5 V
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| JEDEC-95 Code |
|
TO-220AB
|
| JESD-30 Code |
|
R-PSFM-T3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
125 W
|
| Qualification Status |
|
Not Qualified
|
| Rise Time-Max (tr) |
|
18 ns
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
POWER CONTROL
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Nom (toff) |
|
225 ns
|
| Turn-on Time-Nom (ton) |
|
14 ns
|
| Base Number Matches |
|
2
|
|
|
|
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