HGTP12N60D1 vs HGTD7N60C3S9A feature comparison

HGTP12N60D1 Intersil Corporation

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HGTD7N60C3S9A Harris Semiconductor

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERSIL CORP HARRIS SEMICONDUCTOR
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 21 A 14 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 600 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 25 V
JEDEC-95 Code TO-220AB TO-252AA
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 430 ns 490 ns
Turn-on Time-Nom (ton) 100 ns 20 ns
Base Number Matches 3 4

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