HGTP20N35G3VL vs HGT1S20N35G3VL feature comparison

HGTP20N35G3VL Fairchild Semiconductor Corporation

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HGT1S20N35G3VL Harris Semiconductor

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP HARRIS SEMICONDUCTOR
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 20 A 20 A
Collector-Emitter Voltage-Max 320 V 320 V
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate-Emitter Thr Voltage-Max 2.3 V 2.3 V
Gate-Emitter Voltage-Max 12 V 10 V
JEDEC-95 Code TO-220AB TO-262AA
JESD-30 Code R-PSFM-T3 R-PSIP-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application AUTOMOTIVE IGNITION AUTOMOTIVE IGNITION
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 15000 ns
Base Number Matches 1 3
HTS Code 8541.29.00.95
Additional Feature VOLTAGE CLAMPING
Power Dissipation Ambient-Max 150 W
VCEsat-Max 2.8 V