HGTP3N60C3DR
vs
HGTG12N60C3D
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
HARRIS SEMICONDUCTOR
|
HARRIS SEMICONDUCTOR
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW CONDUCTION LOSS, HYPER FAST RECOVERY
|
LOW CONDUCTION LOSS, HYPER FAST RECOVERY
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
6 A
|
24 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| JEDEC-95 Code |
TO-220AB
|
TO-247
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
MOTOR CONTROL
|
MOTOR CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
325 ns
|
270 ns
|
| Turn-on Time-Nom (ton) |
5 ns
|
14 ns
|
| Base Number Matches |
3
|
4
|
| Rohs Code |
|
No
|
| Fall Time-Max (tf) |
|
275000000000 ns
|
| Gate-Emitter Thr Voltage-Max |
|
6 V
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
104 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|