HGTP7N60A4D
vs
HGTP3N60A4D
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
FAIRCHILD SEMICONDUCTOR CORP
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
onsemi
|
|
Additional Feature |
LOW CONDUCTION LOSS
|
LOW CONDUCTION LOSS
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
34 A
|
17 A
|
Collector-Emitter Voltage-Max |
600 V
|
600 V
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
Fall Time-Max (tf) |
85 ns
|
100 ns
|
Gate-Emitter Thr Voltage-Max |
7 V
|
7 V
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
125 W
|
70 W
|
Surface Mount |
NO
|
NO
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
235 ns
|
|
Turn-off Time-Nom (toff) |
205 ns
|
180 ns
|
Turn-on Time-Nom (ton) |
17 ns
|
17.5 ns
|
VCEsat-Max |
2.7 V
|
|
Base Number Matches |
4
|
4
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
TO-220
|
Package Description |
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
|
3
|
Manufacturer Package Code |
|
TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
|
HTS Code |
|
8541.29.00.95
|
JESD-609 Code |
|
e3
|
Qualification Status |
|
Not Qualified
|
Rise Time-Max (tr) |
|
15 ns
|
Terminal Finish |
|
MATTE TIN
|
|
|
|
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