HN1D02FUTE85N vs HN1D02FUTE85R feature comparison

HN1D02FUTE85N Toshiba America Electronic Components

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HN1D02FUTE85R Toshiba America Electronic Components

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Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP TOSHIBA CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration 2 BANKS, COMMON CATHODE, 2 ELEMENTS 2 BANKS, COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1.2 V
JESD-30 Code R-PDSO-G6 R-PDSO-G6
Non-rep Pk Forward Current-Max 2 A 2 A
Number of Elements 4 4
Number of Terminals 6 6
Operating Temperature-Max 125 °C 125 °C
Output Current-Max 0.1 A 0.1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max 0.6 W 0.6 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.5 µA 0.5 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1

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