HN1D02FUTE85N vs MMBD4448HCDW-7 feature comparison

HN1D02FUTE85N Toshiba America Electronic Components

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MMBD4448HCDW-7 Diodes Incorporated

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP DIODES INC
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration 2 BANKS, COMMON CATHODE, 2 ELEMENTS 2 BANKS, COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 0.72 V
JESD-30 Code R-PDSO-G6 R-PDSO-G5
Non-rep Pk Forward Current-Max 2 A
Number of Elements 4 4
Number of Terminals 6 6
Operating Temperature-Max 125 °C
Output Current-Max 0.1 A 0.25 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.6 W 0.2 W
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.5 µA 0.1 µA
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 2
Rohs Code No
Package Description R-PDSO-G6
Pin Count 6
JESD-609 Code e0
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 80 V
Reverse Test Voltage 70 V
Terminal Finish TIN LEAD

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