HUF75309D3ST vs IRF9Z34NSPBF feature comparison

HUF75309D3ST Intersil Corporation

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IRF9Z34NSPBF International Rectifier

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Rohs Code No Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERSIL CORP INTERNATIONAL RECTIFIER CORP
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 17 A 19 A
Drain-source On Resistance-Max 0.07 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation Ambient-Max 45 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 80 ns
Turn-on Time-Max (ton) 70 ns
Base Number Matches 4 2
Pbfree Code Yes
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 180 mJ
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 68 W
Pulsed Drain Current-Max (IDM) 68 A
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Time@Peak Reflow Temperature-Max (s) 30

Compare HUF75309D3ST with alternatives

Compare IRF9Z34NSPBF with alternatives