HUF75309D3ST
vs
MTD2N40E-T4
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
INTERSIL CORP
|
MOTOROLA INC
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
400 V
|
Drain Current-Max (ID) |
17 A
|
2 A
|
Drain-source On Resistance-Max |
0.07 Ω
|
3.5 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252AA
|
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
45 W
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
80 ns
|
|
Turn-on Time-Max (ton) |
70 ns
|
|
Base Number Matches |
4
|
2
|
Package Description |
|
SMALL OUTLINE, R-PSSO-G2
|
Avalanche Energy Rating (Eas) |
|
45 mJ
|
Pulsed Drain Current-Max (IDM) |
|
6 A
|
|
|
|
Compare HUF75309D3ST with alternatives
Compare MTD2N40E-T4 with alternatives