HUF75321D3S vs HUF75321D3ST feature comparison

HUF75321D3S Rochester Electronics LLC

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HUF75321D3ST Fairchild Semiconductor Corporation

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Pbfree Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code unknown not_compliant
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 20 A 20 A
Drain-source On Resistance-Max 0.036 Ω 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level NOT APPLICABLE 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT APPLICABLE 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 4
Rohs Code Yes
Part Package Code DPAK
Package Description TO-252AA, 3 PIN
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
ECCN Code EAR99
HTS Code 8541.29.00.95
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 93 W

Compare HUF75321D3S with alternatives

Compare HUF75321D3ST with alternatives