HUF75321D3ST vs IRFZ24N feature comparison

HUF75321D3ST onsemi

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IRFZ24N Infineon Technologies AG

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Pbfree Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ONSEMI INFINEON TECHNOLOGIES AG
Package Description TO-252AA, 3 PIN TO-220AB, 3 PIN
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer onsemi Infineon
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 20 A 17 A
Drain-source On Resistance-Max 0.036 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 93 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - annealed Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 49
Rohs Code No
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 71 mJ
Power Dissipation Ambient-Max 45 W
Pulsed Drain Current-Max (IDM) 68 A

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