HUF75321D3ST vs BUZ101SL feature comparison

HUF75321D3ST Intersil Corporation

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BUZ101SL Rochester Electronics LLC

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Rohs Code No
Part Life Cycle Code Transferred Active
Ihs Manufacturer INTERSIL CORP ROCHESTER ELECTRONICS LLC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 20 A 20 A
Drain-source On Resistance-Max 0.036 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 55 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 3
Part Package Code TO-220AB
Package Description PLASTIC, TO-220, 3 PIN
Pin Count 3
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 90 mJ
Pulsed Drain Current-Max (IDM) 80 A

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