HUF75329D3
vs
HUF75329D3
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ROCHESTER ELECTRONICS LLC
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
20 A
|
20 A
|
Drain-source On Resistance-Max |
0.026 Ω
|
0.026 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-251AA
|
TO-251AA
|
JESD-30 Code |
R-PSIP-T3
|
R-PSIP-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
IN-LINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
128 W
|
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
6
|
5
|
Pbfree Code |
|
Yes
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare HUF75329D3 with alternatives
Compare HUF75329D3 with alternatives