HUF75329D3
vs
MTD20N06VT4
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ON SEMICONDUCTOR
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
60 V
|
Drain Current-Max (ID) |
20 A
|
20 A
|
Drain-source On Resistance-Max |
0.026 Ω
|
0.08 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-251AA
|
|
JESD-30 Code |
R-PSIP-T3
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
IN-LINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
128 W
|
60 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN
|
TIN LEAD
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
6
|
2
|
Package Description |
|
SMALL OUTLINE, R-PSSO-G2
|
Pin Count |
|
3
|
Manufacturer Package Code |
|
CASE 369C-01
|
Additional Feature |
|
AVALANCHE RATED
|
Avalanche Energy Rating (Eas) |
|
200 mJ
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
235
|
Pulsed Drain Current-Max (IDM) |
|
70 A
|
|
|
|
Compare HUF75329D3 with alternatives
Compare MTD20N06VT4 with alternatives