HUF75329D3S vs HUFA76419D3 feature comparison

HUF75329D3S Intersil Corporation

Buy Now Datasheet

HUFA76419D3 Intersil Corporation

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERSIL CORP INTERSIL CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 60 V
Drain Current-Max (ID) 20 A 20 A
Drain-source On Resistance-Max 0.026 Ω 0.043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-251AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 4 3
Package Description IN-LINE, R-PSIP-T3

Compare HUF75329D3S with alternatives

Compare HUFA76419D3 with alternatives