HUF75631SK8T vs HUFA75631SK8T feature comparison

HUF75631SK8T Fairchild Semiconductor Corporation

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HUFA75631SK8T Intersil Corporation

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Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP INTERSIL CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 5.5 A 5.5 A
Drain-source On Resistance-Max 0.039 Ω 0.039 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA MS-012AA
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Package Description SMALL OUTLINE, R-PDSO-G8

Compare HUF75631SK8T with alternatives

Compare HUFA75631SK8T with alternatives