HUF76105DK8T
vs
HAT1020R
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Not Recommended
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
RENESAS ELECTRONICS CORP
|
| Part Package Code |
SOIC
|
SOIC
|
| Package Description |
SOIC-8
|
SMALL OUTLINE, R-PDSO-G8
|
| Pin Count |
8
|
8
|
| Reach Compliance Code |
unknown
|
compliant
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
5 A
|
5 A
|
| Drain-source On Resistance-Max |
0.072 Ω
|
0.13 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
MS-012AA
|
MS-012AA
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
NOT SPECIFIED
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
2
|
| ECCN Code |
|
EAR99
|
| Date Of Intro |
|
1995-05-01
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
2.5 W
|
| Pulsed Drain Current-Max (IDM) |
|
40 A
|
|
|
|
Compare HUF76105DK8T with alternatives
Compare HAT1020R with alternatives