HUF76419S3ST vs HUF76419S3ST feature comparison

HUF76419S3ST Intersil Corporation

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HUF76419S3ST Fairchild Semiconductor Corporation

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer INTERSIL CORP FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature ULTRA LOW RESISTANCE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 29 A 29 A
Drain-source On Resistance-Max 0.04 Ω 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Rohs Code Yes
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 75 W
Terminal Finish MATTE TIN

Compare HUF76419S3ST with alternatives

Compare HUF76419S3ST with alternatives