HUFA76409P3 vs PHB20N06T,118 feature comparison

HUFA76409P3 Fairchild Semiconductor Corporation

Buy Now Datasheet

PHB20N06T,118 NXP Semiconductors

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP NXP SEMICONDUCTORS
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 18 A 20.3 A
Drain-source On Resistance-Max 0.074 Ω 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 49 W 62 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN TIN
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Part Package Code D2PAK
Package Description PLASTIC, D2PAK-3
Pin Count 3
Manufacturer Package Code SOT404
HTS Code 8541.29.00.75
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 30.3 mJ
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 245
Pulsed Drain Current-Max (IDM) 81 A
Time@Peak Reflow Temperature-Max (s) 30

Compare HUFA76409P3 with alternatives

Compare PHB20N06T,118 with alternatives