IGB15N60TATMA1 vs IRGBC30FD2 feature comparison

IGB15N60TATMA1 Infineon Technologies AG

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IRGBC30FD2 International Rectifier

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Pbfree Code No
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK TO-220AB
Package Description SMALL OUTLINE, R-PSSO-G2 TO-220AB, 3 PIN
Pin Count 4 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 30 A 31 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn) TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 291 ns 900 ns
Turn-on Time-Nom (ton) 32 ns 145 ns
Base Number Matches 1 1
HTS Code 8541.29.00.95
Additional Feature FAST
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 100 W
VCEsat-Max 2.1 V

Compare IGB15N60TATMA1 with alternatives

Compare IRGBC30FD2 with alternatives