IGB15N60TATMA1 vs IXGH12N60BD1 feature comparison

IGB15N60TATMA1 Infineon Technologies AG

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IXGH12N60BD1 IXYS Corporation

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Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG IXYS CORP
Part Package Code D2PAK TO-247AD
Package Description SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3
Pin Count 4 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 30 A 24 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB TO-247AD
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 291 ns
Turn-on Time-Nom (ton) 32 ns
Base Number Matches 1 1
Fall Time-Max (tf) 270 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
Power Dissipation-Max (Abs) 100 W

Compare IGB15N60TATMA1 with alternatives

Compare IXGH12N60BD1 with alternatives