IGB15N60TATMA1 vs IXGH36N60A3D4 feature comparison

IGB15N60TATMA1 Infineon Technologies AG

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IXGH36N60A3D4 Littelfuse Inc

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG LITTELFUSE INC
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 ,
Pin Count 4
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon LITTELFUSE
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 30 A 96 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code TO-263AB TO-247AD
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn) Matte Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 10
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 291 ns 1000 ns
Turn-on Time-Nom (ton) 32 ns 43 ns
Base Number Matches 1 1
Additional Feature LOW CONDUCTION LOSS
Gate-Emitter Thr Voltage-Max 5.5 V
Gate-Emitter Voltage-Max 20 V
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 220 W
VCEsat-Max 1.4 V

Compare IGB15N60TATMA1 with alternatives

Compare IXGH36N60A3D4 with alternatives