IGC99T120T8RLX1SA3
vs
IRGC100B120UB
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
UNCASED CHIP, R-XUUC-N5
|
DIE-2
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
20 Weeks
|
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
SINGLE
|
SINGLE
|
| Gate-Emitter Thr Voltage-Max |
6.4 V
|
6 V
|
| Gate-Emitter Voltage-Max |
20 V
|
|
| JESD-30 Code |
R-XUUC-N5
|
O-XUUC-N
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
5
|
2
|
| Operating Temperature-Max |
175 °C
|
|
| Operating Temperature-Min |
-40 °C
|
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
UNCASED CHIP
|
UNCASED CHIP
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
UPPER
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
1.97 V
|
|
| Base Number Matches |
1
|
2
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare IGC99T120T8RLX1SA3 with alternatives
Compare IRGC100B120UB with alternatives