IGP15N60TXKSA1 vs IGP10N60T feature comparison

IGP15N60TXKSA1 Infineon Technologies AG

Buy Now Datasheet

IGP10N60T Infineon Technologies AG

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 19 Weeks
Samacsys Manufacturer Infineon Infineon
Additional Feature HIGH SPEED
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 30 A 20 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 291 ns 296 ns
Turn-on Time-Nom (ton) 32 ns 21 ns
Base Number Matches 1 2
Gate-Emitter Thr Voltage-Max 5.7 V
Gate-Emitter Voltage-Max 20 V
Power Dissipation-Max (Abs) 110 W

Compare IGP15N60TXKSA1 with alternatives

Compare IGP10N60T with alternatives