IGW40N65H5A
vs
IGW50N65F5A
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
,
|
,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Base Number Matches |
2
|
2
|
| Case Connection |
|
COLLECTOR
|
| Collector Current-Max (IC) |
|
80 A
|
| Collector-Emitter Voltage-Max |
|
650 V
|
| Configuration |
|
SINGLE
|
| Gate-Emitter Thr Voltage-Max |
|
4.8 V
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| JEDEC-95 Code |
|
TO-247
|
| JESD-30 Code |
|
R-PSFM-T3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-40 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
270 W
|
| Reference Standard |
|
AEC-Q101
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
POWER CONTROL
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Nom (toff) |
|
196 ns
|
| Turn-on Time-Nom (ton) |
|
35 ns
|
| VCEsat-Max |
|
2.1 V
|
|
|
|
Compare IGW40N65H5A with alternatives
Compare IGW50N65F5A with alternatives