IMBD4448/E8 vs IMBD4448/E9 feature comparison

IMBD4448/E8 Vishay Semiconductors

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IMBD4448/E9 Vishay Semiconductors

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Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer GENERAL SEMICONDUCTOR INC GENERAL SEMICONDUCTOR INC
Reach Compliance Code unknown unknown
Additional Feature FAST SWITCHING FAST SWITCHING
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.72 V 0.72 V
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e0
Non-rep Pk Forward Current-Max 0.5 A 0.5 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.35 W 0.35 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 2