IMBD4448/E9 vs IMBD4448-V-G-08 feature comparison

IMBD4448/E9 Vishay Semiconductors

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IMBD4448-V-G-08 Vishay Intertechnologies

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Pbfree Code Yes
Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer GENERAL SEMICONDUCTOR INC VISHAY INTERTECHNOLOGY INC
Package Description R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70
Additional Feature FAST SWITCHING
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.72 V 1 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Non-rep Pk Forward Current-Max 0.5 A 0.5 A
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.35 W 0.35 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 75 V 100 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 1
Application FAST RECOVERY
Moisture Sensitivity Level 1
Number of Phases 1
Reference Standard AEC-Q101
Reverse Current-Max 2.5 µA
Reverse Test Voltage 70 V

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Compare IMBD4448-V-G-08 with alternatives