IMBD4448 vs 1N4448WS feature comparison

IMBD4448 Diodes Incorporated

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1N4448WS Galaxy Microelectronics

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V 1.25 V
JESD-609 Code e0
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.15 A 0.15 A
Rep Pk Reverse Voltage-Max 75 V 75 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Base Number Matches 1 29
Package Description SOD-323, 2 PIN
HTS Code 8541.10.00.70
Application FAST RECOVERY
Breakdown Voltage-Min 75 V
Diode Element Material SILICON
JESD-30 Code R-PDSO-G2
Non-rep Pk Forward Current-Max 0.5 A
Number of Terminals 2
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation-Max 0.2 W
Reverse Current-Max 2.5 µA
Reverse Test Voltage 75 V
Terminal Form GULL WING
Terminal Position DUAL

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