IMBD4448-G3-08 vs 1N914BWSRRG feature comparison

IMBD4448-G3-08 Vishay Intertechnologies

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1N914BWSRRG Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Package Description GREEN PACKAGE-3 GREEN, PLASTIC PACKAGE-2
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-F2
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -65 °C
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.35 W 0.2 W
Reference Standard AEC-Q101
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.004 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Additional Feature LOW POWER LOSS
Application EFFICIENCY
Forward Voltage-Max (VF) 1 V
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Reverse Current-Max 5 µA
Reverse Test Voltage 75 V
Terminal Finish MATTE TIN

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Compare 1N914BWSRRG with alternatives