IPB100N04S4H2ATMA1 vs IPP100N04S4H2AKSA1 feature comparison

IPB100N04S4H2ATMA1 Infineon Technologies AG

Buy Now Datasheet

IPP100N04S4H2AKSA1 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-263, 3 PIN GREEN, PLASTIC, TO-220, 3 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 280 mJ 280 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 100 A 100 A
Drain-source On Resistance-Max 0.0024 Ω 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A 400 A
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

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Compare IPP100N04S4H2AKSA1 with alternatives