IPB100N04S4H2ATMA1 vs IPI90N04S4-02 feature comparison

IPB100N04S4H2ATMA1 Infineon Technologies AG

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IPI90N04S4-02 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-263, 3 PIN IN-LINE, R-PSIP-T3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 280 mJ 475 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 100 A 90 A
Drain-source On Resistance-Max 0.0024 Ω 0.0025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-262AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A 360 A
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code TO-262AA
Pin Count 3
JESD-609 Code e3
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Terminal Finish Tin (Sn)

Compare IPB100N04S4H2ATMA1 with alternatives

Compare IPI90N04S4-02 with alternatives