IPB120N04S404ATMA1 vs STB190NF04 feature comparison

IPB120N04S404ATMA1 Infineon Technologies AG

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STB190NF04 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG STMICROELECTRONICS
Package Description TO-263, 3/2 PIN SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 52 Weeks
Avalanche Energy Rating (Eas) 75 mJ 860 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 120 A 120 A
Drain-source On Resistance-Max 0.0036 Ω 0.0043 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 480 A 480 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Part Package Code D2PAK
Pin Count 3
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 310 W
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare IPB120N04S404ATMA1 with alternatives

Compare STB190NF04 with alternatives