IPB160N04S402DXTMA1 vs IPB160N04S3-H2 feature comparison

IPB160N04S402DXTMA1 Infineon Technologies AG

Buy Now Datasheet

IPB160N04S3-H2 Infineon Technologies AG

Buy Now Datasheet
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G6 SMALL OUTLINE, R-PSSO-G6
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Infineon
Additional Feature ULTRA LOW RESISTANCE ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 220 mJ 898 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 160 A 160 A
Drain-source On Resistance-Max 0.0019 Ω 0.0021 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263 TO-263
JESD-30 Code R-PSSO-G6 R-PSSO-G6
Number of Elements 1 1
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 640 A 640 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-263
Pin Count 3
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 214 W
Qualification Status Not Qualified
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare IPB160N04S402DXTMA1 with alternatives

Compare IPB160N04S3-H2 with alternatives