IPB180N04S401ATMA1 vs IPB011N04NG feature comparison

IPB180N04S401ATMA1 Infineon Technologies AG

Buy Now Datasheet

IPB011N04NG Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G6 SMALL OUTLINE, R-PSSO-G6
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature ULTRA-LOW RESISTANCE AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 550 mJ 610 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 180 A 180 A
Drain-source On Resistance-Max 0.0013 Ω 0.0011 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G6 R-PSSO-G6
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 720 A 1260 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code TO-263
Pin Count 7
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare IPB180N04S401ATMA1 with alternatives

Compare IPB011N04NG with alternatives