IPB60R125C6ATMA1 vs APT30N60BC6 feature comparison

IPB60R125C6ATMA1 Infineon Technologies AG

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APT30N60BC6 Microchip Technology Inc

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Pbfree Code No
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG MICROCHIP TECHNOLOGY INC
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 16 Weeks, 4 Days 26 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 636 mJ 636 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.125 Ω 0.125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-247
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e1
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 89 A 89 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn) TIN SILVER COPPER
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Power Dissipation-Max (Abs) 219 W

Compare IPB60R125C6ATMA1 with alternatives

Compare APT30N60BC6 with alternatives