IPB60R190C6 vs STW29NK50Z feature comparison

IPB60R190C6 Infineon Technologies AG

Buy Now Datasheet

STW29NK50Z STMicroelectronics

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG STMICROELECTRONICS
Part Package Code D2PAK TO-247AC
Package Description SMALL OUTLINE, R-PSSO-G2 TO-247, 3 PIN
Pin Count 4 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon STMicroelectronics
Avalanche Energy Rating (Eas) 418 mJ 550 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 500 V
Drain Current-Max (ID) 20.2 A 31 A
Drain-source On Resistance-Max 0.19 Ω 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-247AC
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 151 W 350 W
Pulsed Drain Current-Max (IDM) 59 A 124 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn) MATTE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
parentfamilyid 4193772
Samacsys Description STW29NK50Z N-Channel MOSFET Transistor, 31 A, 500 V, 3-Pin TO-247 STMicroelectronics
Samacsys Modified On 2019-05-23 14:45:06

Compare IPB60R190C6 with alternatives

Compare STW29NK50Z with alternatives