IPB60R600C6ATMA1 vs IPB60R520CP feature comparison

IPB60R600C6ATMA1 Infineon Technologies AG

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IPB60R520CP Infineon Technologies AG

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Pbfree Code No Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code D2PAK D2PAK
Package Description GREEN, PLASTIC, TO-263, 3 PIN GREEN, PLASTIC, TO-263, 3 PIN
Pin Count 4 4
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks 4 Weeks
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 133 mJ 166 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 7.3 A 6.8 A
Drain-source On Resistance-Max 0.6 Ω 0.52 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 19 A 17 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Peak Reflow Temperature (Cel) 245
Power Dissipation-Max (Abs) 66 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare IPB60R600C6ATMA1 with alternatives

Compare IPB60R520CP with alternatives