IPB80N06S209XT vs SP0000-82518 feature comparison

IPB80N06S209XT Infineon Technologies AG

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SP0000-82518 Infineon Technologies AG

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Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TO-263, 3 PIN
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 370 mJ 700 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 80 A 80 A
Drain-source On Resistance-Max 0.0088 Ω 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-262AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A 320 A
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Feedback Cap-Max (Crss) 540 pF
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 300 W
Reference Standard AEC-Q101

Compare IPB80N06S209XT with alternatives

Compare SP0000-82518 with alternatives