IPB80N06S2LH5ATMA4 vs IRF610B_FP001 feature comparison

IPB80N06S2LH5ATMA4 Infineon Technologies AG

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IRF610B_FP001 Fairchild Semiconductor Corporation

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description TO-263, 3/2 PIN FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 700 mJ 40 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 200 V
Drain Current-Max (ID) 80 A 3.3 A
Drain-source On Resistance-Max 0.0062 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 320 A 10 A
Reference Standard AEC-Q101
Surface Mount YES NO
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code SFM
Pin Count 3
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 38 W
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare IPB80N06S2LH5ATMA4 with alternatives

Compare IRF610B_FP001 with alternatives