IPB80N06S2LH5ATMA4
vs
PHD3055L
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
PHILIPS SEMICONDUCTORS
|
| Package Description |
TO-263, 3/2 PIN
|
,
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
Infineon
|
|
| Avalanche Energy Rating (Eas) |
700 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
55 V
|
|
| Drain Current-Max (ID) |
80 A
|
12 A
|
| Drain-source On Resistance-Max |
0.0062 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-263AB
|
|
| JESD-30 Code |
R-PSSO-G2
|
|
| JESD-609 Code |
e3
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
320 A
|
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
2
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
50 W
|
|
|
|
Compare IPB80N06S2LH5ATMA4 with alternatives