IPD135N03LGHF vs RJK0365DPA-02-J0 feature comparison

IPD135N03LGHF Infineon Technologies AG

Buy Now Datasheet

RJK0365DPA-02-J0 Renesas Electronics Corporation

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG RENESAS ELECTRONICS CORP
Package Description GREEN, PLASTIC, TO-252, 3 PIN SMALL OUTLINE, R-PDSO-N5
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 20 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.0135 Ω 0.0127 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 R-PDSO-N5
Number of Elements 1 1
Number of Terminals 2 5
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 210 A 120 A
Surface Mount YES YES
Terminal Form GULL WING NO LEAD
Terminal Position SINGLE DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code Yes
Pin Count 8
JESD-609 Code e4
Power Dissipation-Max (Abs) 30 W
Qualification Status Not Qualified
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)

Compare IPD135N03LGHF with alternatives

Compare RJK0365DPA-02-J0 with alternatives