IPD30N03S2L20ATMA1 vs FQD45N03LTF feature comparison

IPD30N03S2L20ATMA1 Infineon Technologies AG

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FQD45N03LTF Fairchild Semiconductor Corporation

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Rohs Code Yes No
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 70 mJ 200 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.031 Ω 0.031 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A 120 A
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin/Lead (Sn85Pb15)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Part Package Code TO-252
Pin Count 3
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified

Compare IPD30N03S2L20ATMA1 with alternatives

Compare FQD45N03LTF with alternatives