IPD30N03S4L-09
vs
SIRA18ADP-T1-GE3
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Not Recommended
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
VISHAY INTERTECHNOLOGY INC
|
Part Package Code |
TO-252
|
|
Package Description |
GREEN, PLASTIC, TO-252, 3 PIN
|
SOP-8
|
Pin Count |
4
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Samacsys Manufacturer |
Infineon
|
Vishay
|
Avalanche Energy Rating (Eas) |
28 mJ
|
5 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
30 A
|
30.6 A
|
Drain-source On Resistance-Max |
0.009 Ω
|
0.0087 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252
|
|
JESD-30 Code |
R-PSSO-G2
|
R-PDSO-F5
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
5
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
42 W
|
|
Pulsed Drain Current-Max (IDM) |
120 A
|
70 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
GULL WING
|
FLAT
|
Terminal Position |
SINGLE
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
1
|
Factory Lead Time |
|
20 Weeks
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare IPD30N03S4L-09 with alternatives
Compare SIRA18ADP-T1-GE3 with alternatives