IPD30N06S2L23ATMA3 vs SP001061286 feature comparison

IPD30N06S2L23ATMA3 Infineon Technologies AG

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SP001061286 Infineon Technologies AG

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description TO-252-3-11, 3/2 PIN TO-252-3-11, 3/2 PIN
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks, 4 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 150 mJ 150 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.03 Ω 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 120 A 120 A
Reference Standard AEC-Q101 AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Additional Feature ULTRA LOW RESISTANCE

Compare IPD30N06S2L23ATMA3 with alternatives

Compare SP001061286 with alternatives