IPD30N10S3L-34 vs 2SK3647-01 feature comparison

IPD30N10S3L-34 Infineon Technologies AG

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2SK3647-01 Fuji Electric Co Ltd

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FUJI ELECTRIC CO LTD
Part Package Code TO-252AB
Package Description GREEN, PLASTIC, TO-252, 3 PIN CHIP CARRIER, S-XBCC-N4
Pin Count 4 4
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 138 mJ 278 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.0418 Ω 0.044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 68 pF
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 S-XBCC-N4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 57 W
Pulsed Drain Current-Max (IDM) 120 A 120 A
Qualification Status Not Qualified Not Qualified
Reference Standard AEC-Q101; IEC-68-1
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING NO LEAD
Terminal Position SINGLE BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Transistor Application SWITCHING

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