IPD50P04P4L11ATMA1
vs
NVTFWS014P04M8LTAG
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Not Recommended
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
ONSEMI
|
Package Description |
GREEN, PLASTIC PACKAGE-3/2
|
WDFN-8
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Infineon
|
onsemi
|
Avalanche Energy Rating (Eas) |
18 mJ
|
143 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
40 V
|
40 V
|
Drain Current-Max (ID) |
50 A
|
49 A
|
Drain-source On Resistance-Max |
0.0106 Ω
|
0.0138 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-252
|
|
JESD-30 Code |
R-PSSO-G2
|
S-PDSO-F8
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
200 A
|
224 A
|
Reference Standard |
AEC-Q101
|
AEC-Q101
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
Matte Tin (Sn) - annealed
|
Terminal Form |
GULL WING
|
FLAT
|
Terminal Position |
SINGLE
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Manufacturer Package Code |
|
515AN
|
Factory Lead Time |
|
14 Weeks
|
Date Of Intro |
|
2019-12-04
|
Feedback Cap-Max (Crss) |
|
32 pF
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
61 W
|
|
|
|
Compare IPD50P04P4L11ATMA1 with alternatives
Compare NVTFWS014P04M8LTAG with alternatives