IPD50P04P4L11ATMA1 vs NVTFWS014P04M8LTAG feature comparison

IPD50P04P4L11ATMA1 Infineon Technologies AG

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NVTFWS014P04M8LTAG onsemi

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Rohs Code Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG ONSEMI
Package Description GREEN, PLASTIC PACKAGE-3/2 WDFN-8
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon onsemi
Avalanche Energy Rating (Eas) 18 mJ 143 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 50 A 49 A
Drain-source On Resistance-Max 0.0106 Ω 0.0138 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 S-PDSO-F8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR SQUARE
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 200 A 224 A
Reference Standard AEC-Q101 AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn) Matte Tin (Sn) - annealed
Terminal Form GULL WING FLAT
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Manufacturer Package Code 515AN
Factory Lead Time 14 Weeks
Date Of Intro 2019-12-04
Feedback Cap-Max (Crss) 32 pF
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max (Abs) 61 W

Compare IPD50P04P4L11ATMA1 with alternatives

Compare NVTFWS014P04M8LTAG with alternatives