IPD90N06S306ATMA1 vs STD3NA50T4 feature comparison

IPD90N06S306ATMA1 Infineon Technologies AG

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STD3NA50T4 STMicroelectronics

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG STMICROELECTRONICS
Package Description GREEN, TO-252, 3 PIN DPAK-3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 250 mJ 40 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 500 V
Drain Current-Max (ID) 90 A 2.7 A
Drain-source On Resistance-Max 0.006 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 360 A 10.8 A
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code No
Part Package Code TO-252AA
Pin Count 3
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 50 W
Qualification Status Not Qualified
Terminal Finish TIN LEAD
Transistor Application SWITCHING

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